Single Bipolar Transistors BC635RL1G product image

BC635RL1G

$0.04
  • Description:TRANS NPN 45V 1A TO92
  • Series:-

SKU:3812e2bbbb9d Category: Brand:

  
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BC635RL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC635RL1G

  • Description:TRANS NPN 45V 1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC635RL1G

BC635RL1G

Single Bipolar Transistors Overview

The onsemi BC635RL1G is an NPN silicon bipolar junction transistor (BJT) designed for high current applications. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 1 A. The device operates within a temperature range of -55°C to +150°C and offers a typical gain-bandwidth product of 200 MHz. Packaged in a lead-free TO-92 case, it provides a total device dissipation of 625 mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

  • Capable of handling up to 1 A of continuous collector current
  • Suitable for driver stages in audio and video amplifiers
  • Features low voltage operation with a 45 V collector-emitter breakdown

Single Bipolar Transistors Applications

  • Driver stages of audio amplifiers
  • Driver stages of video amplifiers
  • General-purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific part number suffix against official documentation to confirm package type and shipping configuration. Ensure compatibility with RoHS directives if required by the design specifications. Confirm availability status as distribution channels may vary.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 1 A current capability and 45 V voltage rating is required. Consider the TO-92 through-hole package for prototyping or low-volume assembly. Evaluate thermal management requirements based on the 625 mW power dissipation limit.

Single Bipolar Transistors Part Context

This component belongs to the BC63x series of high-current NPN transistors from onsemi. It shares the same physical package and general electrical characteristics as the BC637 and BC639 models, differentiated primarily by their respective collector-emitter voltage ratings of 60 V and 80 V.

Single Bipolar Transistors Replacement Considerations

BC637RL1G

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC635?

The maximum collector-emitter voltage (VCEO) for the BC635 is 45 V.

What is the DC current gain range for this transistor?

The DC current gain (hFE) ranges from a minimum of 25 to a maximum of 250, depending on the collector current conditions.

Is the BC635RL1G available in a lead-free package?

Yes, the 'G' suffix indicates that the device is available in a Pb-Free package.

BC635RL1GBC635RL1G
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