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BC635RL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 1A TO92. Review the specifications below when checking this part for your BOM.
The onsemi BC635RL1G is an NPN silicon bipolar junction transistor (BJT) designed for high current applications. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 1 A. The device operates within a temperature range of -55°C to +150°C and offers a typical gain-bandwidth product of 200 MHz. Packaged in a lead-free TO-92 case, it provides a total device dissipation of 625 mW at 25°C ambient temperature.
Verify the specific part number suffix against official documentation to confirm package type and shipping configuration. Ensure compatibility with RoHS directives if required by the design specifications. Confirm availability status as distribution channels may vary.
Select this component when a single NPN transistor with 1 A current capability and 45 V voltage rating is required. Consider the TO-92 through-hole package for prototyping or low-volume assembly. Evaluate thermal management requirements based on the 625 mW power dissipation limit.
This component belongs to the BC63x series of high-current NPN transistors from onsemi. It shares the same physical package and general electrical characteristics as the BC637 and BC639 models, differentiated primarily by their respective collector-emitter voltage ratings of 60 V and 80 V.
BC637RL1G
The maximum collector-emitter voltage (VCEO) for the BC635 is 45 V.
The DC current gain (hFE) ranges from a minimum of 25 to a maximum of 250, depending on the collector current conditions.
Yes, the 'G' suffix indicates that the device is available in a Pb-Free package.
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