Single Bipolar Transistors BC635ZL1G product image

BC635ZL1G

  • Description:TRANS NPN 45V 1A TO92
  • Series:-

SKU:d9b7d4e9c898 Category: Brand:

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BC635ZL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC635ZL1G

  • Description:TRANS NPN 45V 1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC635ZL1G

BC635ZL1G

Single Bipolar Transistors Overview

The BC635ZL1G is an NPN silicon transistor in a TO-92 package. It features a collector-emitter voltage of 45 Vdc and continuous collector current of 1.0 Adc. Total device dissipation is 625 mW at 25°C ambient, derating by 5.0 mW/°C above this temperature. The junction temperature range spans from -55 to +150 °C. DC current gain ranges from 25 to 250 at 5 mA and 40 to 250 at 150 mA. Thermal resistance is 200 °C/W junction-to-ambient and 83.3 °C/W junction-to-case.

Single Bipolar Transistors Feature Summary

  • High current capability with a maximum collector current of 1.0 A
  • Low voltage operation rated for up to 45 V collector-emitter breakdown
  • Pb-free compliant packaging available

Single Bipolar Transistors Applications

  • Driver stages of audio amplifiers
  • Driver stages of video amplifiers
  • General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix ZL1G against official documentation to confirm the tape and reel shipping configuration. Ensure the component meets Pb-free requirements if mandated by the design specifications. Cross-reference the exact part number with the manufacturer's current datasheet revision to validate all electrical parameters before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a medium power NPN transistor is required for driver stages or general-purpose switching. Consider the 1.0 A continuous current rating and 45 V breakdown voltage limits. Evaluate thermal management needs based on the specified junction-to-ambient thermal resistance and power dissipation derating curves provided in the datasheet.

Single Bipolar Transistors Part Context

This component belongs to the BC63x series of high-current NPN silicon transistors manufactured by onsemi. The series includes variants with different voltage ratings, such as the BC637 (60 V) and BC639 (80 V). All share similar physical packages and general performance characteristics suitable for amplifier driver stages.

Single Bipolar Transistors Replacement Considerations

BC635RL1G

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC635?

The maximum collector-emitter voltage (VCEO) for the BC635 is 45 Vdc.

How does the DC current gain vary with collector current?

The DC current gain (hFE) ranges from 25 to 250 at a collector current of 5 mA, and from 40 to 250 at a collector current of 150 mA.

BC635ZL1GBC635ZL1G

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