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BC63916_D26Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 80V 1A TO-92-3. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for BC63916_D26Z
- Description：TRANS NPN 80V 1A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：1 W
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
Single Bipolar Transistors datasheet and documents for BC63916_D26Z
Single Bipolar Transistors Overview
The BC63916_D26Z is an NPN epitaxial silicon transistor manufactured by onsemi, originally documented under Fairchild Semiconductor. It operates with a collector current of 1 A and a collector-emitter voltage of 80 V. The device features a DC current gain ranging from 25 to 250 depending on the operating point. It is housed in a TO-92 package and supports junction temperatures up to 150 °C.
Single Bipolar Transistors Feature Summary
- NPN epitaxial silicon construction for general-purpose switching and amplification
- High collector current capability of 1 A
- Wide DC current gain range supporting various biasing requirements
Single Bipolar Transistors Applications
- Switching applications
- Amplifier circuits
Single Bipolar Transistors Procurement Notes
Verify the manufacturer origin as onsemi or Fairchild Semiconductor when sourcing this component. Confirm the specific ordering suffix matches the required lead configuration. Ensure the datasheet revision aligns with the production batch specifications.
Single Bipolar Transistors Selection Notes
Select this component for designs requiring moderate power handling within a compact TO-92 footprint. Consider the minimum hFE of 25 at high currents when designing base drive circuits. Verify thermal dissipation limits against the expected ambient temperature conditions.
Single Bipolar Transistors Part Context
This part belongs to the BC639 series of NPN transistors. It shares similar electrical characteristics with other variants in the family but may differ in packaging options or specific gain binning. The D26Z suffix indicates a specific tape and reel or bulk packaging format.
Single Bipolar Transistors Replacement Considerations
BC639D27Z
Single Bipolar Transistors FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 80 V.
What is the package type?
The component is available in a TO-92 package.
What is the typical current gain bandwidth product?
The current gain bandwidth product (fT) is typically 100 MHz.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
