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The onsemi BC639_J35Z is an NPN medium power transistor housed in a TO-92-3 (TO-226AA) through-hole package. It features a maximum collector current of 1 A and a collector-emitter voltage rating of 80 V. The device has a maximum power dissipation of 625 mW and a transition frequency of 200 MHz. Operating temperature ranges from -55 °C to +150 °C junction temperature. The component is classified as obsolete.
Verify the obsolete status before design finalization, as manufacturing may have ceased. Confirm that the J35Z suffix corresponds to the specific bulk packaging variant intended for your assembly process. Ensure compatibility with existing board layouts using the TO-92-3 footprint. Check for available alternative sources or last-time buy options if long-term supply is required.
Select this component when an NPN transistor with 1 A continuous current and 80 V breakdown is needed in a standard through-hole package. Compare against active alternatives like the BC639G if new production is planned. Consider thermal management requirements given the 625 mW dissipation limit in the small plastic package.
This part belongs to the BC639 family of NPN medium power transistors. It shares characteristics with similar devices such as the BC635 and BC637, which offer comparable electrical ratings but may differ in gain grouping or specific manufacturer revisions. The J35Z designation typically indicates a specific packaging or testing variant within the broader product line.
Public confirmed substitute part numbers are not provided in the source data. Consult manufacturer documentation for direct replacements or functional equivalents.