Single Bipolar Transistors BC639_L34Z product image

BC639_L34Z

  • Description:TRANS NPN 80V 1A TO-92-3
  • Series:-

SKU:b5bdf32f8094 Category: Brand:

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BC639_L34Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 80V 1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC639_L34Z

  • Description:TRANS NPN 80V 1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC639_L34Z

BC639_L34Z

Single Bipolar Transistors Overview

The onsemi BC639_L34Z is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A. The device has a maximum power dissipation of 625 mW and a transition frequency of 200 MHz. DC current gain is specified at a minimum of 100 under standard test conditions.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction for reliable switching and amplification
  • High current handling capability up to 1 A
  • Low voltage operation with 80 V breakdown rating
  • Through-hole mounting for standard PCB integration

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications requiring moderate current
  • Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer part number BC639_L34Z against official onsemi documentation to confirm specifications. Ensure the TO-92-3 package type matches design requirements. Check component status as availability may vary. Confirm RoHS compliance if required by project standards. Validate electrical parameters against application needs before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring an NPN transistor with 80 V collector-emitter voltage and 1 A current capacity. The TO-92-3 package suits through-hole assembly processes. Consider the 625 mW power dissipation limit when designing thermal management solutions. Verify that the 200 MHz transition frequency meets the signal bandwidth requirements of the intended circuit application.

Single Bipolar Transistors Part Context

This component belongs to the BC639 series of NPN medium power transistors manufactured by onsemi. The series is designed for general-purpose amplification and switching tasks. The specific suffix indicates packaging or lot coding details defined by the manufacturer. These transistors are widely used in consumer electronics and industrial control systems where reliable low-voltage performance is required.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: BC639G, BC639RL1G, BC63916.

BC639_L34ZBC639_L34Z

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