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The BC640_J35Z is a PNP epitaxial silicon transistor manufactured by onsemi, housed in a TO-92 plastic package. It serves as the complementary device to the BC639 NPN transistor. The component supports a maximum collector current of -1 A and features a collector-emitter voltage rating of -80 V. Key electrical characteristics include a DC current gain (hFE) ranging from 25 to 160 depending on the test condition, a collector-emitter saturation voltage of -0.5 V at -500 mA, and a transition frequency of 100 MHz.
Verify the manufacturer origin, as the BC640 part number is produced by multiple vendors including Fairchild Semiconductor and onsemi. Confirm that the specific J35Z suffix corresponds to the required packaging or marking specifications. Ensure the datasheet revision matches the procurement requirements before finalizing orders.
Select this component when a PNP medium power transistor is required for circuits operating up to 80 V and 1 A. It is specifically designed to complement the BC639 NPN transistor in push-pull configurations. Consider the TO-92 package constraints for thermal dissipation and physical space limitations in the target design.
The BC640 belongs to a family of PNP medium power transistors widely used in consumer electronics. It is frequently paired with the BC639 series to create balanced amplifier stages. The device utilizes planar epitaxial silicon technology to ensure reliable performance in standard through-hole mounting applications.
BC640BU
The BC639 is the designated NPN complementary transistor for the BC640.
The maximum continuous collector current is -1 A.
The DC current gain ranges from 25 to 160, depending on the collector current test conditions.