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Product Detailed Parameters
- Description：TRANS PNP 80V 0.5A TO92
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：625 mW
- Frequency - Transition：150MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：TO-92 (TO-226)
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Overview
The BC640G is a PNP silicon medium power transistor manufactured by onsemi, housed in a TO-92 plastic package. It features a maximum collector-emitter voltage of -80 Vdc and a continuous collector current rating of -0.5 Adc. The device supports an operating junction temperature range from -55°C to +150°C with a total device dissipation of 625 mW at 25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) ranging from 40 to 160 at specific test conditions, a transition frequency (fT) typical of 150 MHz, and low saturation voltages suitable for switching applications.
Feature Summary
- High current capability supporting up to 0.5 A continuous collector current
- Low voltage operation rated for -80 V collector-emitter breakdown
- Lead-free compliant packaging available under the G suffix designation
Applications
- Audio amplifiers
- Video amplifiers
- General-purpose switching circuits
Procurement Notes
Verify that the ordering suffix 'G' corresponds to lead-free compliant packages as specified in the manufacturer's documentation. Confirm the package style matches the required TO-92 dimensions and pinout configuration before integration into the design. Ensure thermal management strategies account for the specified derating curves above 25°C ambient temperature to maintain reliability within the stated operational limits.
Selection Notes
Select this component when a PNP transistor with high current handling and moderate voltage ratings is required. Compare the hFE ranges against circuit biasing requirements to ensure adequate gain. Verify that the TO-92 package fits the mechanical constraints and that the thermal resistance values align with the system's heat dissipation capabilities for the intended duty cycle.
Part Context
This part belongs to the BC638, BC640, and BC640-16 family of high current transistors published by Semiconductor Components Industries, LLC. The BC640 variant specifically provides higher voltage ratings compared to the BC638 complement. The datasheet revision indicates updates to electrical characteristics and thermal data relevant to standard industrial and consumer electronics designs requiring reliable PNP switching performance.
Replacement Considerations
BC640TA
FAQ
What is the maximum collector-emitter voltage for the BC640?
The maximum collector-emitter voltage (VCEO) is -80 Vdc.
Does the BC640G indicate a specific package material change?
Yes, the 'G' suffix denotes that the device is supplied in a lead-free package.
What is the typical current gain bandwidth product?
The typical current gain bandwidth product (fT) is 150 MHz at -50 mA collector current.
