BC640TF

BC640TF

  • Description:TRANS PNP 80V 1A TO-92-3
  • Series:-

SKU:e4398f60c1fb Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 80V 1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3

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BC640TF

Overview

The BC640TF is a PNP epitaxial silicon transistor housed in a TO-92 plastic package. It features a collector-emitter voltage (VCEO) of -80 V and a continuous collector current (IC) of -1 A. The device supports a peak collector current of -1.5 A and offers a DC current gain (hFE) ranging from 25 to 160 depending on the test condition. Key electrical parameters include an emitter-base voltage (VEBO) of -5 V, a collector power dissipation of 1 W at 25°C, and a junction temperature rating of 150 °C. The component exhibits a current gain bandwidth product (fT) of 100 MHz.

Feature Summary

  • PNP epitaxial silicon construction for switching and amplifier applications
  • High current capability with 1 A continuous collector current rating
  • Complementary design to the BC639 NPN transistor series

Applications

  • General-purpose switching circuits
  • Linear amplifier stages
  • Driver circuits requiring complementary PNP/NPN pairs

Procurement Notes

Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Ensure the specific ordering suffix matches the required tape-and-reel or bulk packaging configuration. Confirm that the component meets RoHS compliance standards if required for your assembly process. Cross-reference the datasheet revision to ensure all electrical characteristics align with your design specifications before finalizing procurement.

Selection Notes

Select this component when a PNP medium-power transistor is needed to complement an NPN counterpart like the BC639. Consider the -80 V collector-emitter voltage limit and 1 A current capacity against circuit requirements. Evaluate the thermal resistance and power dissipation capabilities for the intended operating environment. Verify that the TO-92 package dimensions fit the available board space and mounting constraints.

Part Context

The BC640 belongs to a family of medium-power bipolar junction transistors designed for general-purpose use. It serves as the PNP complement to the BC639 NPN transistor, facilitating push-pull configurations. Manufactured using epitaxial silicon planar technology, it provides reliable performance in standard TO-92 packages suitable through-hole mounting.

Replacement Considerations

BC640BU, BC640TA, BC640TAR, BC640TFR, BC640_J35Z, BC640_J61Z

BC640TFBC640TF

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