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The BC640TF is a PNP epitaxial silicon transistor housed in a TO-92 plastic package. It features a collector-emitter voltage (VCEO) of -80 V and a continuous collector current (IC) of -1 A. The device supports a peak collector current of -1.5 A and offers a DC current gain (hFE) ranging from 25 to 160 depending on the test condition. Key electrical parameters include an emitter-base voltage (VEBO) of -5 V, a collector power dissipation of 1 W at 25°C, and a junction temperature rating of 150 °C. The component exhibits a current gain bandwidth product (fT) of 100 MHz.
Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Ensure the specific ordering suffix matches the required tape-and-reel or bulk packaging configuration. Confirm that the component meets RoHS compliance standards if required for your assembly process. Cross-reference the datasheet revision to ensure all electrical characteristics align with your design specifications before finalizing procurement.
Select this component when a PNP medium-power transistor is needed to complement an NPN counterpart like the BC639. Consider the -80 V collector-emitter voltage limit and 1 A current capacity against circuit requirements. Evaluate the thermal resistance and power dissipation capabilities for the intended operating environment. Verify that the TO-92 package dimensions fit the available board space and mounting constraints.
The BC640 belongs to a family of medium-power bipolar junction transistors designed for general-purpose use. It serves as the PNP complement to the BC639 NPN transistor, facilitating push-pull configurations. Manufactured using epitaxial silicon planar technology, it provides reliable performance in standard TO-92 packages suitable through-hole mounting.
BC640BU, BC640TA, BC640TAR, BC640TFR, BC640_J35Z, BC640_J61Z