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The BC640ZL1G is a PNP silicon medium power transistor manufactured by onsemi, housed in a TO-92 plastic package. It features a maximum collector-emitter voltage of -80 Vdc and a continuous collector current rating of -0.5 Adc. The device supports an operating junction temperature range from -55°C to +150°C with a thermal resistance of 83.3 °C/W (junction-to-case). Electrical characteristics include a DC current gain ranging from 40 to 250 at specific test conditions, a saturation voltage of -0.5 Vdc, and a current gain-bandwidth product of 150 MHz.
Verify the ordering suffix ZL1G corresponds to the specified 2000-unit ammo box packaging configuration. Confirm that the Pb-Free designation aligns with project material requirements. Ensure the manufacturer source matches onsemi documentation to validate electrical parameter tolerances and thermal ratings.
Select this component when a PNP transistor with an 80V collector-emitter breakdown voltage is required. Consider the TO-92 package constraints for thermal dissipation if ambient temperatures exceed standard limits. Verify that the minimum DC current gain meets the specific circuit biasing requirements compared to complementary NPN variants.
This part belongs to the BC638/BC640 family of high-current transistors produced by onsemi. It serves as the PNP complement to the BC635, BC637, and BC639 NPN devices. The ZL1G suffix indicates a specific tape-and-reel or ammo box packaging format distinct from bulk box configurations.
The maximum collector-emitter voltage (VCEO) is -80 Vdc.
Yes, the 'G' suffix indicates that the device is available in Pb-Free packages.
The typical current gain-bandwidth product (fT) is 150 MHz at a collector current of -50 mAdc.