BC640ZL1G

BC640ZL1G

  • Description:TRANS PNP 80V 0.5A TO92
  • Series:-

SKU:e54ad6f9b099 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 80V 0.5A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:625 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)

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BC640ZL1G

Overview

The BC640ZL1G is a PNP silicon medium power transistor manufactured by onsemi, housed in a TO-92 plastic package. It features a maximum collector-emitter voltage of -80 Vdc and a continuous collector current rating of -0.5 Adc. The device supports an operating junction temperature range from -55°C to +150°C with a thermal resistance of 83.3 °C/W (junction-to-case). Electrical characteristics include a DC current gain ranging from 40 to 250 at specific test conditions, a saturation voltage of -0.5 Vdc, and a current gain-bandwidth product of 150 MHz.

Feature Summary

  • PNP medium power transistor designed for high current applications
  • Low voltage capability suitable for various switching and amplification tasks
  • Lead-free packaging compliant with environmental standards

Applications

  • Audio amplifiers
  • Video amplifiers

Procurement Notes

Verify the ordering suffix ZL1G corresponds to the specified 2000-unit ammo box packaging configuration. Confirm that the Pb-Free designation aligns with project material requirements. Ensure the manufacturer source matches onsemi documentation to validate electrical parameter tolerances and thermal ratings.

Selection Notes

Select this component when a PNP transistor with an 80V collector-emitter breakdown voltage is required. Consider the TO-92 package constraints for thermal dissipation if ambient temperatures exceed standard limits. Verify that the minimum DC current gain meets the specific circuit biasing requirements compared to complementary NPN variants.

Part Context

This part belongs to the BC638/BC640 family of high-current transistors produced by onsemi. It serves as the PNP complement to the BC635, BC637, and BC639 NPN devices. The ZL1G suffix indicates a specific tape-and-reel or ammo box packaging format distinct from bulk box configurations.

Replacement Considerations

  • BC640
  • BC640G

FAQ

What is the maximum collector-emitter voltage for the BC640ZL1G?

The maximum collector-emitter voltage (VCEO) is -80 Vdc.

Does the BC640ZL1G support lead-free soldering processes?

Yes, the 'G' suffix indicates that the device is available in Pb-Free packages.

What is the typical current gain-bandwidth product?

The typical current gain-bandwidth product (fT) is 150 MHz at a collector current of -50 mAdc.

BC640ZL1GBC640ZL1G

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