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The BC807-16WE6327 is a PNP silicon bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It features a dual configuration housed in an SC-74-6 package for surface mount technology. The device supports a maximum continuous collector current of 500 mA and offers a collector-emitter breakdown voltage (VCEO) of 45 V, with a collector-base voltage (VCBO) of 50 V. Key electrical characteristics include a transition frequency (fT) of 200 MHz and a DC current gain (hFE) ranging from 160 to 400. It operates within a temperature range of -65°C to +150°C and meets AEC-Q100 automotive qualification standards.
Verify component authenticity through authorized distribution channels. Confirm that the specific suffix matches the required hFE binning and packaging format. Ensure compliance with RoHS directives and check for end-of-life status or obsolescence notices before finalizing procurement plans.
Select this component when a dual PNP configuration is required in a small form factor. Consider its 45 V rating and 500 mA current capacity for moderate power handling needs. Evaluate the 200 MHz bandwidth against circuit speed requirements and ensure the SC-74-6 footprint aligns with the PCB layout constraints.
This part belongs to the BC807 series of PNP transistors produced by Infineon Technologies. The series is designed for general-purpose amplification and switching tasks. The specific model integrates two transistors, optimizing board space compared to discrete components while maintaining standardized electrical parameters for reliable integration into electronic designs.
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in hFE ranges or thermal resistance. Verify pinout compatibility and package dimensions before substitution.