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The BC807-25WT1G is a PNP silicon general-purpose transistor manufactured by onsemi. It operates with a maximum collector-emitter voltage of -45 V and a continuous collector current of -500 mA dc. The device features a DC current gain (hFE) ranging from 160 to 400 at -100 mA and -1.0 V, and up to 250 to 600 at -500 mA. It has a transition frequency of 100 MHz and a total power dissipation of 460 mW in an SC-70 package.
Verify the specific ordering suffix 'WT1G' corresponds to the SC-70 package and tape and reel shipping configuration. Confirm that the 'S' prefix variant is required if AEC-Q101 qualification and PPAP documentation are mandatory for the intended application environment.
Select this component when a PNP small-signal transistor with high current handling and defined gain bands is needed. Ensure the operating voltage does not exceed -45 V and the thermal design accommodates the junction-to-ambient resistance of 272 °C/W for reliable operation within the specified temperature range.
This part belongs to the BC807-25W series of PNP silicon transistors designed for general-purpose use. It serves as the complement to NPN devices like the BC817-25W. The 'W' designation indicates the SC-70 surface-mount package, while the 'T1G' suffix specifies the tape and reel packaging format.
BC807-40WT1G
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive environments.