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Product Detailed Parameters
- Description：TRANS PNP 45V 0.5A SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：310 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC807-40-7 is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 package. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -0.5 A. The device has a power dissipation rating of 310 mW at +25°C and operates within a temperature range of -55°C to +150°C. The DC current gain (hFE) ranges from 170 to 600 at IC = -300 mA. Key electrical parameters include a collector-base breakdown voltage of -50 V, a gain-bandwidth product of 100 MHz, and a collector-emitter saturation voltage of -0.7 V at IC = -500 mA.
Feature Summary
- Epitaxial planar die construction for reliable performance
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green packaging
- Ideally suited for automatic insertion into manufacturing lines
- Complementary NPN types available as BC817-16/-25/-40
Applications
- General-purpose switching applications
- Audio frequency (AF) amplifier stages
Procurement Notes
Verify the specific ordering suffix '-7' against official Diodes Incorporated documentation to confirm reel size and packing quantity specifications. Ensure that the selected component matches the required hFE binning for the BC807-40 variant. Confirm compliance with environmental directives such as RoHS 3 and REACH requirements prior to procurement.
Selection Notes
Select this component when a PNP small-signal transistor with a -45 V collector-emitter voltage and -0.5 A continuous current capability is required. The BC807-40 variant offers a high DC current gain range of 170 to 600, making it suitable for amplification tasks. Consider the SOT23 package dimensions and thermal resistance characteristics for proper heat dissipation in the target application design.
Part Context
This part belongs to the BC807 series of PNP silicon transistors designed for general-purpose use. It serves as the complementary counterpart to the BC817 NPN series. The BC807-40 specifically denotes a defined DC current gain range, distinguishing it from the BC807-16 and BC807-25 variants which have different gain specifications.
Replacement Considerations
BC807-40Q
FAQ
What is the maximum collector-emitter voltage for the BC807-40-7?
The maximum collector-emitter voltage (VCEO) is -45 V.
Does the BC807-40-7 meet environmental compliance standards?
Yes, the device is totally lead-free, fully RoHS compliant, and halogen and antimony-free.
What is the typical DC current gain range for the BC807-40 variant?
The DC current gain (hFE) ranges from 170 to 600 when measured at IC = -300 mA and VCE = -1.0 V.
