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The BC807-40 is a PNP silicon general-purpose transistor manufactured by Nexperia, designed for high current and switching applications. It is housed in the SOT23 (TO-236AB) surface-mount plastic package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V, a maximum collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 500 mA with a power dissipation of 345 mW. It features a transition frequency (fT) of 80 MHz and operates within a temperature range of -65 °C to +150 °C.
Verify the manufacturer origin carefully, as the BC807-40 is primarily produced by Nexperia. Confirm that the specific batch matches the required AEC-Q101 automotive qualification if applicable to your design. Ensure the package type corresponds exactly to SOT23/TO-236AB standards to maintain compatibility with existing footprints and assembly processes.
Select this component when a PNP transistor with 45 V breakdown and 500 mA continuous current is required in a small form factor. It serves as the complementary counterpart to the BC817-40 NPN transistor. Consider the thermal management requirements due to the 345 mW power dissipation limit in the SOT23 package during high-load operations.
This part belongs to the BC807 family of PNP transistors, which includes variants like BC807-16 and BC807-25 differentiated by their gain characteristics. The BC807-40 specifically denotes the 45 V rating variant. It is widely used in consumer electronics and industrial controls where reliable low-power switching is essential.
The BC817-40 is the NPN complement within the same series. Other manufacturers such as Diotec Semiconductor produce equivalent parts under the same designation, offering compatible electrical specifications and pinouts for direct substitution in standard designs.