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The BC807-40Q-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -0.5 A. The device provides a minimum DC current gain (hFE) of 250 at IC = -100 mA. Electrical characteristics include a collector-base breakdown voltage (BVCBO) of -50 V and a gain-bandwidth product (fT) of 100 MHz. Thermal resistance from junction to ambient is 403 °C/W under standard conditions.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details and reel specifications. Ensure that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards, before finalizing procurement decisions.
Select this component when a PNP transistor with a minimum hFE of 250 is required for low-current switching or amplification tasks. The SOT23 package facilitates automated assembly processes. Consider the thermal resistance limits and maximum operating temperature range when designing high-density circuits.
This part belongs to the BC807 series of PNP general-purpose transistors. It serves as the complementary counterpart to the BC817 NPN series. The BC807-40 variant specifically denotes a minimum DC current gain of 250, distinguishing it from lower gain options within the same family.
BC817-40
The minimum DC current gain is 250, measured at a collector current of -100 mA and a collector-emitter voltage of -1.0 V.
Yes, the device is defined as a Halogen and Antimony Free "Green" product, containing less than 900ppm bromine and chlorine combined.
The maximum power dissipation is 310 mW when mounted on a minimum recommended pad layout FR4 PCB with high coverage of single-sided 1oz copper in still air.