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The BC807-40W-QF is a PNP general-purpose transistor from the Nexperia BC807W-Q series, housed in an SOT323 (SC-70) surface-mount package. It features a maximum collector-emitter voltage of -45 V and a continuous collector current of -500 mA. The device supports a peak collector current of -1 A for single pulses up to 1 ms. DC current gain (hFE) ranges from 250 to 600 at VCE = -1 V and IC = -100 mA. It has a total power dissipation of 200 mW at Tamb ≤ 25 °C and operates within a junction temperature range of -65 °C to +150 °C.
Verify the specific ordering code suffix against official Nexperia documentation to confirm the reel packaging format. Ensure the component matches the required AEC-Q101 qualification status for your target application environment. Cross-reference the marking code '5C' on the physical device to validate authenticity and correct gain binning before integration into production assemblies.
Select this variant when a high DC current gain between 250 and 600 is required for efficient base drive control. The SOT323 package offers a compact footprint suitable for space-constrained printed circuit board layouts. Consider the thermal resistance characteristics and derating curves if operating near the maximum power dissipation limits or in elevated ambient temperatures.
This component belongs to the BC807W-Q series of PNP transistors manufactured by Nexperia. It serves as the complementary counterpart to the BC817-40W-Q NPN transistor. The series utilizes silicon epitaxial planar technology and is designed for robust performance in both consumer and automotive electronic environments requiring small form factor discrete semiconductors.
BC817-40W-Q is the direct NPN complement within the same series. Other BC807-40 variants in different packages may serve as functional substitutes if pin compatibility and thermal constraints allow.