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The BC807-40W is a PNP silicon general-purpose transistor manufactured by Taiwan Semiconductor Corporation. It operates with a maximum collector-emitter voltage of 45V and supports a continuous collector current of 500mA. The device features a DC current gain (hFE) ranging from 250 to 600 at specified test conditions. It is housed in an SOT-323 surface-mount package, providing a power dissipation capacity of 200mW. The component exhibits a transition frequency of 80MHz and functions reliably within a temperature range of -55°C to +150°C.
Verify the specific manufacturer marking code on the component body to confirm authenticity. Ensure the ordering suffix matches the required tape-and-reel or cut-tape format. Confirm RoHS compliance status through official documentation before integration into production lines.
Select this component when a high-gain PNP transistor is required in a compact SOT-323 footprint. It serves as the complement to NPN devices like the BC817 series. Consider its 200mW thermal limit and 45V voltage rating against circuit requirements.
This part belongs to the BC807 series of small-signal transistors. It shares functional similarities with industry-standard equivalents but is distinguished by Taiwan Semiconductor's manufacturing specifications and automotive-grade reliability certifications.
Cross-reference with BC807-40W-AQ from Diotec Semiconductor for parameter-equivalent alternatives.