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The BC807-40WT1G is a PNP silicon general-purpose transistor manufactured by onsemi in the SC-70 (SOT-323) surface-mount package. It features a maximum collector-emitter voltage of -45 V, a continuous collector current of -500 mA, and a total device dissipation of 460 mW. The component operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 250 to 600 at -100 mA, a transition frequency (fT) of 100 MHz, and an output capacitance of 10 pF.
Verify that the ordering suffix 'WT1G' corresponds to the SC-70 package with a 3000-unit tape and reel quantity. Confirm the presence of the 'S' prefix if AEC-Q101 qualification and PPAP capability are required for your specific application environment.
Select this component when a compact SMD PNP transistor with high current gain is needed. Ensure the design accommodates the -45 V collector-emitter voltage limit and verify thermal management capabilities for the specified power dissipation under operating conditions.
This part belongs to the BC807 series of general-purpose PNP transistors produced by onsemi. It serves as the complement to the BC817 NPN series. The device is designed for use in standard electronic circuits where small signal amplification or switching is required.
Compatible substitutes include BC807-40W,115 from Nexperia and BC807-40W from Diodes Incorporated. Verify pinout compatibility and electrical parameter alignment before substitution.
The device marking code is 5C.
Standard versions are not explicitly marked for automotive use. Only parts with the 'S' prefix (e.g., SBC807-40WT1G) are AEC-Q101 qualified and PPAP capable.
The typical output capacitance (Cobo) is 10 pF at VCB = -10 V and f = 1.0 MHz.