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The BC807W-QX is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 45 V and supports a continuous DC collector current of 500 mA. The device utilizes silicon technology and is housed in the DFN1110D-3 surface-mount package, which measures 1.1 mm by 1.0 mm. Key electrical limits include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a power dissipation rating of 250 mW. It features a gain-bandwidth product of 80 MHz and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix QX against official Nexperia documentation to confirm the DFN1110D-3 package and AEC-Q101 qualification status. Ensure the ordering part number matches the required voltage and current specifications for your design. Cross-reference the manufacturer's latest datasheet to confirm compliance with RoHS and REACH regulations before finalizing procurement.
Select this component when a small footprint PNP transistor with automotive qualification is required. The DFN1110D-3 package offers space savings compared to traditional SOT-23 packages while maintaining similar electrical characteristics. Consider the 45 V collector-emitter voltage rating to ensure adequate headroom for the target application circuitry.
This component belongs to the BC807 series of PNP general-purpose transistors produced by Nexperia. The series includes variants with different voltage ratings such as BC807-16, BC807-25, and BC807-40. The BC807W-QX specifically denotes the automotive-qualified version in the DFN1110D-3 package, complementing the NPN BC817 series.
Official substitutes within the same family include BC807-40,215 (SOT-23 package) and BC807-QR (SOT-23 package). Verify pinout compatibility and thermal performance when replacing the DFN1110D-3 package with alternative form factors.