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The Diotec Semiconductor BC808-16 is a surface-mount general-purpose PNP silicon epitaxial planar transistor housed in an SOT-23 (TO-236) package. It features a maximum collector current of 800 mA and a power dissipation rating of 300 mW. The device provides a DC current gain (hFE) group of 160, with a minimum value of 100 at 100 mA and 1 V. Maximum ratings include a collector-emitter voltage of 25 V (base open) or 30 V (emitter-base shorted), and a collector-base breakdown voltage of 30 V. Operating junction temperature ranges from -55°C to +150°C.
Verify the specific suffix designation when ordering, as it determines compliance standards such as AEC-Q101 qualification. Confirm that the required hFE bin matches the design specifications, as the -16 variant has defined minimum gain thresholds. Ensure the procurement documentation references the correct package type and marking code to avoid assembly errors during manufacturing.
Select the BC808-16 when a PNP transistor with high current handling up to 800 mA is required alongside moderate voltage ratings. This component serves as the complementary pair to the BC817 series NPN transistors. Designers should account for the specific hFE range of the -16 group to ensure consistent performance in amplifier designs compared to higher gain variants.
This component belongs to the BC807/BC808 family of surface-mount general-purpose transistors manufactured by Diotec Semiconductor. The family includes complementary NPN types (BC817/BC818) and offers multiple gain groupings (-16, -25, -40). These devices are designed for standard commercial and industrial grade reliability using plastic cases classified under UL 94V-0.
BC808-16-C
The marking code for the BC808-16 is 5E or 5CR.
The BC808-16 is a PNP transistor, whereas the BC807-16 is its complementary NPN counterpart. They share similar packaging and general characteristics but have opposite polarities.
The maximum collector-emitter voltage is 25 V when the base is open, or 30 V when the emitter-base junction is shorted.