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The Diotec Semiconductor BC808-25 is a general-purpose PNP silicon epitaxial planar transistor housed in an SOT-23 (TO-236) surface-mount package. It features a maximum collector current of 800 mA and a collector-emitter voltage rating of 25 V with the base open, or 30 V with the emitter-base shorted. The device has a power dissipation capacity of 300 mW at 25°C ambient temperature and operates within a junction temperature range of -55°C to +150°C. It belongs to the hFE group -25, providing a DC current gain between 160 and 400 at 100 mA. The transition frequency is typically 100 MHz.
Verify the specific ordering suffix when purchasing. Standard commercial versions lack automotive qualification. Only parts marked with the -Q or -AQ suffix meet AEC-Q101 standards. Confirm that the received component matches the required hFE bin (-25) for your circuit design. Ensure the datasheet version aligns with your manufacturing specifications.
Select this component for low-power PNP switching tasks requiring up to 800 mA. The -25 suffix indicates a specific gain band suitable for moderate amplification needs. Consider the complementary BC817-25 NPN transistor for push-pull configurations. Evaluate thermal resistance if operating near the maximum power dissipation limit in enclosed spaces.
This part belongs to the BC807/BC808 family of SMD general-purpose transistors manufactured by Diotec Semiconductor. These devices are widely used as complements to their NPN counterparts, such as the BC817 series. The family offers standardized pinouts across various manufacturers, facilitating easy substitution in existing designs while maintaining consistent electrical characteristics.
BC807-25 serves as the direct NPN complement. Other generic replacements include standard BC808 variants from different manufacturers, provided they match the 800 mA current and 25 V voltage ratings.