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The Diotec Semiconductor BC808-40 is a general-purpose PNP bipolar junction transistor (BJT) designed for surface-mount applications. It utilizes an SOT-23 (TO-236) plastic package and operates with a maximum collector current of 800 mA. The device features a collector-emitter breakdown voltage of 25 V and a collector-base breakdown voltage of 30 V. It offers three distinct DC current gain groups, with the -40 variant providing a minimum hFE of 250 at 100 mA. The component supports a maximum power dissipation of 300 mW and functions within a junction temperature range of -55°C to +150°C.
Verify that the specific ordering suffix matches the required reliability grade. Standard commercial/industrial versions lack automotive certifications. Only variants with the -Q or -AQ suffixes are compliant or qualified for AEC-Q101 standards. Confirm the exact marking code corresponds to the desired gain group before finalizing procurement specifications.
Select the BC808-40 when a higher collector current capacity of 800 mA is required compared to the standard BC807 series. Ensure the application voltage does not exceed the 25 V collector-emitter rating. Verify thermal management requirements against the 300 mW power dissipation limit. Choose the appropriate gain group based on the target hFE requirements for the specific circuit configuration.
This component belongs to the BC807...BC808 family of SMD general-purpose PNP transistors manufactured by Diotec Semiconductor. It serves as the complementary counterpart to the BC818 NPN transistor. The product line includes various voltage ratings and gain groups, with the BC808-40 specifically optimized for higher current handling within the same physical footprint.
BC807-40
The maximum DC collector current is 800 mA.
The -Q suffix denotes AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification.
The typical marking codes are 5G or 5CT.