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Product Detailed Parameters
- Description：TRANS NPN 45V 0.5A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 1V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The BC817-16LT1 is an NPN silicon general-purpose transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 500 mA dc. The device provides a minimum DC current gain (hFE) of 100 at IC = 100 mA and VCE = 1.0 V. It operates within a junction temperature range of -55 to +150 °C and utilizes the SOT-23 (TO-236AB) surface-mount package.
Feature Summary
- NPN silicon construction for general-purpose switching and amplification
- High current capability with 500 mA continuous collector current rating
- Three distinct current gain selections available within the series
Applications
- General-purpose switching circuits
- Amplifier stages
- Driver applications requiring moderate current handling
Procurement Notes
Verify the specific ordering suffix LT1 against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure the component matches the required hFE binning, as the -16 designation specifies a gain range of 100 to 250. Cross-reference the datasheet revision number to guarantee accurate electrical characteristic values during procurement.
Selection Notes
Select this component when a 45 V breakdown voltage and 500 mA current capacity are required in a compact SOT-23 footprint. The -16 variant is appropriate for designs needing a guaranteed minimum hFE of 100. Consider thermal resistance constraints if operating near maximum power dissipation limits on standard FR-5 substrates.
Part Context
This part belongs to the BC817 family of NPN general-purpose transistors produced by onsemi. The family includes variants with different current gain ranges, such as the BC817-25 and BC817-40. All members share identical pinouts and maximum ratings but differ in their DC current gain specifications, allowing designers to optimize circuit performance based on beta requirements.
Replacement Considerations
Compatible substitutes include the BC817-25LT1 and BC817-40LT1 from onsemi, which share the same package and ratings but offer higher minimum current gains. Other manufacturers producing BC817-16 devices in SOT-23 packages may serve as functional equivalents provided electrical parameters align with design requirements.
FAQ
What is the DC current gain range for the BC817-16LT1?
The BC817-16LT1 has a minimum DC current gain (hFE) of 100 and a maximum of 250 when tested at IC = 100 mA and VCE = 1.0 V.
What is the maximum power dissipation on an FR-5 board?
On a standard FR-5 board at 25°C ambient temperature, the total device dissipation is 225 mW with a derating factor of 1.8 mW/°C above 25°C.
How is the SOT-23 package pinout configured?
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector, corresponding to Case 318-08 Style 6.
