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The BC817-16LT1G is a general-purpose NPN silicon transistor manufactured by ON Semiconductor. It features a collector-emitter voltage (VCEO) of 45 V and a maximum continuous collector current (IC) of 0.5 A. The device provides a minimum DC current gain (hFE) of 100 at IC = 100 mA and VCE = 1 V. It is housed in a surface-mount SOT-23 package with a maximum power dissipation of 300 mW. The component operates within a junction temperature range up to 150 °C and complies with RoHS standards.
Verify the specific datasheet revision number when sourcing, as electrical parameters may vary between revisions. Confirm that the supplier provides documentation proving AEC-Q101 qualification if the application requires automotive grade status. Ensure the ordering suffix matches the required packaging format, as variations exist for tape-and-reel quantities.
Select this component when an NPN transistor with 45 V breakdown and 0.5 A current capacity is required in a compact SOT-23 footprint. The -16 suffix indicates a specific hFE binning range starting at 100. Consider the 300 mW power dissipation limit relative to the PCB thermal design. Verify compatibility with the target application's voltage and current requirements against the absolute maximum ratings.
This part belongs to the BC817 series of general-purpose NPN transistors. The LT1G suffix denotes lead-free packaging and specific manufacturing controls. ON Semiconductor produces this device for both industrial and automotive markets, offering it as a drop-in replacement for similar legacy parts while maintaining modern environmental compliance standards.
Cross-reference with BC817-16 from other manufacturers such as Nexperia or Diotec. Verify pinout compatibility and ensure the substitute meets the same AEC-Q101 requirements if automotive use is intended. Check that the alternative device supports the required 0.5 A current and 45 V voltage ratings.