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The BC817-25 is an NPN bipolar junction transistor (BJT) manufactured by Diotec Semiconductor, distributed by Shenzhen SLKORMicro Semicon Co., Ltd. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 800 mA. The device operates with a transition frequency of 100 MHz and dissipates up to 310 mW of power. Key electrical characteristics include a DC current gain (hFE) of at least 160 at 100 mA and 1 V, and a saturation voltage of 700 mV at 500 mA. It is housed in a SOT-23-3 surface-mount package and supports a junction temperature range from -55°C to 150°C.
Verify the manufacturer designation on the component marking, as the BC817-25 is primarily produced by Diotec Semiconductor. Ensure the ordering suffix matches the required tape-and-reel or cut-tape format. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement to align with assembly processes.
Select this component when an NPN BJT with 45 V breakdown and 800 mA current capacity is required in a small SOT-23-3 footprint. Consider the 100 MHz transition frequency for high-speed switching applications. Evaluate thermal management needs given the 310 mW power dissipation limit in the specified package.
The BC817 series represents a family of general-purpose NPN transistors widely used in consumer electronics and industrial equipment. The BC817-25 variant specifically denotes the hFE binning classification within this series. It serves as a standard replacement for legacy TO-92 packages in modern surface-mount designs requiring similar electrical performance.
Cross-reference with other manufacturers' BC817-25 equivalents such as those from Nexperia or ON Semiconductor. Verify pinout compatibility and ensure that alternative sources meet the same hFE gain binning and thermal specifications.