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The Diotec Semiconductor BC817-25W is a single NPN general-purpose bipolar junction transistor (BJT) housed in an SOT-323 surface-mount package. It features a maximum collector current of 500 mA and a collector-emitter voltage rating of 45 V. The device provides a DC current gain (hFE) range of 160 to 400 at 100 mA, with a transition frequency of 100 MHz. Power dissipation is rated at 200 mW, and the operating junction temperature extends up to 150°C.
Verify the specific suffix against official documentation to confirm compliance status. Standard versions are commercial/industrial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ indicates qualification in progress. Confirm package type and marking codes match design requirements before integration.
Select this component for applications requiring low-power NPN switching or amplification in space-constrained designs. Ensure the required hFE group aligns with circuit gain specifications. Verify thermal management capabilities given the 200 mW power dissipation limit in the small SOT-323 footprint.
This part belongs to the BC817W series of SMD general-purpose NPN transistors manufactured by Diotec Semiconductor. It serves as a compact alternative to larger packages like SOT-23, offering similar electrical characteristics in the smaller SOT-323 form factor suitable for high-density PCB layouts.
BC817-16W
The maximum collector-emitter voltage (VCEO) is 45 V.
No, the standard version is commercial/industrial grade. Only variants with the -Q suffix are AEC-Q101 compliant.
The recommended complementary PNP transistor is the BC807W.