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The BC817-25W-7 is an NPN small signal transistor manufactured by Diodes Incorporated, housed in a SOT323 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 500 mA. The device has a power dissipation rating of 200 mW and operates within a temperature range of -65°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 160 to 400 at IC = 100mA and VCE = 1.0V, a gain-bandwidth product (fT) of 100 MHz, and a collector-base capacitance (CCBO) of 12 pF.
Verify the specific ordering suffix matches the required reel size and tape width configuration. Confirm that the component meets all applicable environmental compliance requirements for the target assembly process. Ensure the manufacturer's datasheet revision aligns with the design specifications before finalizing procurement orders.
Select this component when a compact NPN transistor with moderate current handling capabilities is required. The SOT323 package is suitable for space-constrained designs. Consider the hFE range of 160 to 400 for biasing calculations in amplifier applications. Verify thermal management needs against the 200 mW power dissipation limit.
This part belongs to the BC817-xxW series of general-purpose NPN transistors. It is designed as a complement to the BC807-xxW PNP types. The series is optimized for automatic insertion into printed circuit boards. The 'W' designation indicates the SOT323 package format.
Compatible substitutes include BC817-25W-7-F from Nexperia and BC817-25W-7 from other manufacturers offering identical electrical parameters and SOT323 packaging. Verify pinout compatibility and thermal resistance values before substitution.
The maximum operating junction and storage temperature range extends up to +150°C.
Yes, the device is qualified to AEC-Q101 standards, indicating suitability for high-reliability automotive environments.
The DC current gain (hFE) ranges from a minimum of 160 to a maximum of 400 under standard test conditions.