BC817-40LT3G

Overview

The BC817-40LT3G is an NPN silicon general-purpose transistor manufactured by onsemi. It features a collector-emitter voltage of 45 V and a continuous collector current of 500 mA. The device provides a minimum DC current gain (hFE) of 250 at IC = 100 mA, VCE = 1.0 V. It operates within a junction temperature range of -65°C to +150°C and dissipates up to 300 mW on an alumina substrate. The component is housed in a SOT-23 package.

Feature Summary

• High DC current gain selection for efficient switching applications
• Lead-free and halogen-free construction compliant with RoHS standards
• Suitable for automatic optical inspection of solder joints

Applications

• General-purpose switching circuits
• Medium power amplification stages
• Automotive applications requiring AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix LT3G corresponds to the required tape and reel quantity of 10,000 units per the manufacturer's documentation. Confirm that the SBC817-40LT3G variant is not required if automotive site control changes are necessary for the target application environment.

Selection Notes

Select this part when a high hFE value of 250 minimum is required compared to lower gain variants like the BC817-16 or BC817-25. Ensure the design accommodates the 500 mA continuous collector current limit and verify thermal management strategies for the specified power dissipation ratings under actual operating conditions.

Part Context

This component belongs to the BC817 series of NPN general-purpose transistors produced by onsemi. The series includes variants with different current gain ranges, such as BC817-16, BC817-25, and BC817-40. These devices share the same physical SOT-23 package and electrical voltage/current limits but differ primarily in their DC current gain specifications.

Replacement Considerations

Public confirmed substitutes include NSVBC817-40LT3G and SBC817-40LT3G from the same manufacturer family.