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Product Detailed Parameters
- Description：TRANS NPN 45V 0.8A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：310 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The BC81740MTF is an NPN epitaxial silicon transistor manufactured by ON Semiconductor. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 800 mA. The device provides a DC current gain (hFE) range of 250 to 630 at IC = 100 mA and VCE = 1 V. It operates with a maximum power dissipation of 310 mW and a junction temperature up to 150 °C. The component utilizes a SOT-23 3L package and is supplied in tape and reel format.
Feature Summary
- Suitable for general-purpose switching and amplifier applications
- Designed for AF-driver stages and low-power output stages
- Provides complementary functionality to the BC807/BC808 PNP transistors
Applications
- General-purpose switching circuits
- Amplifier applications
- AF-driver stages
- Low power output stages
Procurement Notes
Verify the specific ordering suffixes against official documentation, as system integrations may alter nomenclature. Confirm that the tape and reel packing method aligns with automated assembly requirements. Ensure compliance with RoHS standards and verify the authenticity of the source through authorized distributors to prevent counterfeit components.
Selection Notes
Select this component when a high-gain NPN transistor is required for low-power amplification or switching tasks. The BC81740 variant offers a specific hFE classification suitable for consistent performance in linear regions. Consider the thermal resistance and power dissipation limits relative to the ambient operating conditions and PCB land pattern size.
Part Context
This part belongs to the BC817 series of NPN epitaxial silicon transistors. The '40' suffix denotes the specific DC current gain binning, while 'MTF' indicates the matte finish package and tape and reel packaging configuration. The series is designed to complement the BC808 PNP counterpart for push-pull configurations.
Replacement Considerations
BC81740MTR
FAQ
What does the '40' suffix indicate in the BC81740MTF designation?
The '40' suffix specifies the DC current gain (hFE) classification, which ranges from 250 to 630 under standard test conditions.
Is the BC81740MTF suitable for use in audio frequency driver stages?
Yes, the datasheet explicitly lists suitability for AF-driver stages and low power output stages.
What is the maximum collector-emitter breakdown voltage for this device?
The maximum collector-emitter breakdown voltage (BVCEO) is 45 V when the collector current is 10 mA and the base current is 0.
