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The BC817K25WE6327HTSA1 is an NPN silicon audio frequency (AF) transistor manufactured by Infineon Technologies. It operates with a collector-emitter voltage of 45 V and a maximum continuous collector current of 500 mA. The device features a DC current gain ranging from 160 to 400 at 100 mA, with a transition frequency of 170 MHz. Total power dissipation is rated at 500 mW in the SOT-23 package and 250 mW in the SOT-323 package. It complies with AEC-Q101 standards and RoHS requirements.
Verify the specific suffix 'W' against official documentation to confirm the package type, as it indicates either SOT-23 or SOT-323 depending on the variant. Confirm that the component meets AEC-Q101 qualification if used in automotive contexts. Ensure the ordering code matches the required hFE group for the intended circuit design.
Select this component when a robust NPN transistor with high current handling is required for audio or switching tasks. The choice between SOT-23 and SOT-323 depends on available board space and thermal management needs. Verify the required current gain bin (hFE group) to ensure compatibility with the target circuit's biasing conditions.
This part belongs to the BC817K series of NPN silicon transistors designed for audio frequency applications. It shares characteristics with other members of the family but is distinguished by its specific voltage rating and packaging options. The series is widely used in consumer electronics and industrial control systems requiring reliable small-signal performance.
Check for direct substitutes within the BC817K family such as BC817K-16 or BC817K-40, ensuring voltage ratings match the application. Cross-reference with other manufacturers' NPN transistors offering similar 45V VCEO and 500mA IC specifications.