BC817K40E6327HTSA1

Overview

The BC817K40E6327HTSA1 is an NPN silicon audio frequency transistor manufactured by Infineon Technologies. It operates in a SOT-23 surface-mount package with a collector-emitter voltage of 45 V and a continuous collector current of 500 mA. The device features a transition frequency of 170 MHz, a maximum power dissipation of 500 mW at a case temperature up to 115 °C, and a junction temperature rating of 150 °C. It meets AEC-Q101 qualification standards.

Feature Summary

• Designed for general audio frequency applications
• Provides high collector current capability
• Features low collector-emitter saturation voltage

Applications

• General audio frequency circuits
• Switching applications requiring high gain
• Amplifier stages

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm exact binning and packaging specifications. Ensure compatibility with RoHS compliance requirements and check for any obsolescence notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a single NPN transistor with a 45 V collector-emitter breakdown voltage is required. It is suitable for designs needing a 500 mA continuous collector current and a transition frequency of 170 MHz. Consider the SOT-23 package constraints and the 500 mW power dissipation limit relative to thermal management capabilities.

Part Context

This part belongs to the BC817K series of NPN silicon transistors. It is complemented by the BC807K PNP counterpart. The 'K' designation indicates a shrink chip version within the family. Other variants include different voltage ratings such as BC817K-16 and BC817K-25.

Replacement Considerations

BC817K40E6433HTMA1