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The BC818-40LT1 is an NPN silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of 25 V and a continuous collector current of 500 mA dc. The device features a DC current gain ranging from 250 to 600 at 100 mA, with a maximum saturation voltage of 0.7 V. It utilizes a SOT-23 package (CASE 318) and supports junction temperatures up to 150 °C.
Verify the specific ordering suffix LT1 against official documentation to confirm tape and reel packaging specifications. Ensure compatibility with standard SOT-23 footprint dimensions during PCB layout. Confirm RoHS compliance status if required for the target assembly process.
Select this component for designs requiring a compact NPN transistor with moderate voltage ratings. The SOT-23 form factor suits space-constrained surface-mount layouts. Evaluate thermal dissipation requirements relative to the specified power limits on FR-5 or alumina substrates.
This part belongs to the BC818 series of NPN silicon transistors designed for general-purpose use. It serves as the complementary counterpart to the BC808 PNP series within the same family. The device is optimized for low-voltage, small-signal amplification and switching tasks in consumer electronics.
BC818-40LT1G
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 25 V.