BC818K40E6327HTSA1

$0.34

Description：TRANS NPN 25V 0.5A PG-SOT23
Series：-

SKU:c966a31041ab Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 25V 0.5A PG-SOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：25 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
Power - Max：500 mW
Frequency - Transition：170MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

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BC818K40E6327HTSA1

Overview

The BC818K40E6327HTSA1 is an NPN silicon general-purpose audio frequency transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 25 V and a continuous collector current of 500 mA. The device features a transition frequency of 170 MHz and a total power dissipation of 500 mW at case temperatures up to 115 °C. It is housed in a surface-mount SOT-23 package and meets AEC-Q101 qualification standards.

Feature Summary

Designed for general audio frequency applications
Provides high current gain characteristics
Features low collector-emitter saturation voltage

Applications

General audio frequency circuits
Low-voltage switching applications
Amplifier stages requiring moderate current handling

Procurement Notes

Verify the component status as obsolete or end-of-life before procurement planning. Confirm that the specific ordering suffix matches the required electrical grouping and packaging format. Ensure compatibility with existing PCB footprints and thermal management requirements during integration.

Selection Notes

Select this component when a 25 V breakdown voltage is sufficient for the circuit design. Consider the SOT-23 package constraints regarding thermal resistance and power dissipation limits. Verify that the hFE group selection aligns with the required gain specifications for the intended application.

Part Context

This part belongs to the BC817/BC818K series of NPN silicon transistors. It shares similar structural characteristics with the BC817K variant but differs in its maximum collector-emitter voltage rating, which is lower at 25 V compared to the 45 V rating of the BC817K series.