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Product Detailed Parameters
- Description：TRANS NPN 65V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC846ALT1G is a general-purpose NPN silicon transistor from the BC846ALT1G series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 65 V and a collector-base voltage (VCBO) of 80 V. The device supports a continuous collector current of 100 mA with a total power dissipation of 225 mW in an SOT-23 package. Key electrical characteristics include a DC current gain (hFE) ranging from 110 to 220 at IC = 10 mA, and a transition frequency (fT) of 100 MHz. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Moisture Sensitivity Level 1 classification for standard surface mount processing
- High electrostatic discharge protection exceeding 4000 V via Human Body Model
- Lead-free, halogen-free, and brominated flame retardant-free construction compliant with RoHS standards
Applications
- General purpose switching applications
- Amplifier circuits requiring low noise performance
- Automotive electronics utilizing AEC-Q101 qualified variants
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm that the requested part number matches the exact pinout style required for the target PCB footprint. Ensure compliance with RoHS directives if environmental regulations apply to the final assembly. Check for any discontinued status notifications regarding older manufacturing lots before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a single NPN transistor with moderate voltage ratings up to 65 V. The SOT-23 package offers a compact form factor suitable for space-constrained printed circuit boards. Consider the thermal resistance characteristics when determining heat dissipation requirements in high-density layouts. Verify that the required current gain falls within the specified ranges for the intended operating conditions.
Part Context
This device belongs to the BC846ALT1G series of general-purpose NPN transistors produced by onsemi. The series includes multiple gain groupings and voltage variants designed for broad electronic application coverage. The product utilizes silicon technology and is available in lead-free packaging options to meet modern environmental standards.
Replacement Considerations
BC846ALT3G
FAQ
What is the maximum collector-emitter breakdown voltage for the BC846?
The maximum collector-emitter breakdown voltage (V(BR)CEO) for the BC846 variant is 65 V.
Does the BC846ALT1G support automotive applications?
Yes, variants with the S or NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
What is the ESD rating for this component?
The device has an ESD rating of greater than 4000 V according to the Human Body Model and greater than 400 V according to the Machine Model.
