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The BC846B is a single NPN silicon small-signal bipolar junction transistor (BJT) designed for general-purpose amplifier applications. It features a maximum collector-emitter voltage of 65 V and a continuous collector current rating of 100 mA. The device operates within a temperature range of -55°C to +150°C and dissipates up to 250 mW in an SOT-23 package. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, a transition frequency of 300 MHz, and a collector-emitter saturation voltage of 600 mV at 5 mA and 100 mA.
Verify the specific manufacturer source, as MDD may distribute components originally manufactured by other entities such as Diotec or Nexperia. Confirm that the delivered part matches the required SOT-23 package and electrical specifications. Ensure compliance with RoHS directives and check for any automotive qualification requirements if applicable to the end-use environment.
Select this component when a standard NPN transistor with 65V breakdown voltage is required. The BC846B offers a balance of current handling and gain suitable for discrete logic and analog stages. Consider package availability and manufacturer-specific parameter tolerances during design integration.
The BC846B belongs to the widely used BC846 series of small-signal transistors. This series is standardized across multiple semiconductor manufacturers, including Diotec, Nexperia, and Panjit. While the core electrical ratings remain consistent, minor variations in hFE bins or packaging suffixes may exist between different production sources.
Direct substitutes include BC846B from Nexperia, Diotec Semiconductor, and Central Semiconductor Corp. Cross-referencing datasheets is recommended to verify exact hFE ranges and saturation voltages match the original design requirements.