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The BC846BFSWQ-7 is a dual NPN general-purpose bipolar junction transistor manufactured by Diodes Incorporated. It utilizes the U-DFN1110A-3/SWP surface-mount package and is supplied in tape-and-reel format with a standard factory quantity of 5,000 units. The device features a maximum collector-emitter voltage (VCEO) of 65 V and a continuous collector current rating of 100 mA. Electrical characteristics include a DC current gain (hFE) range of 200 to 450 at 2 mA and 5 V, a transition frequency (fT) of 100 MHz, and a power dissipation capability of 200 mW. The component operates within a temperature range from -65°C to +150°C.
Verify the specific suffix SWQ against official Diodes Incorporated documentation to confirm automotive or qualified status requirements. Confirm the U-DFN1110A-3/SWP package dimensions match your PCB footprint design. Ensure the 5,000-unit reel quantity aligns with your production volume needs. Cross-reference RoHS compliance details directly with the manufacturer's latest environmental declaration.
Select this component when a dual NPN transistor is required in a minimal footprint. The 65 V rating provides adequate headroom for low-voltage logic interfaces. The 100 mA current capacity supports moderate load driving. Compare the 100 MHz fT against higher-speed alternatives if RF performance is critical. Evaluate the 200 mW power dissipation limit against thermal management constraints in dense assemblies.
This part belongs to the BC846 series of NPN general-purpose transistors produced by Diodes Incorporated. It shares functional similarities with other members like the BC846AS-7 but differs in packaging and specific electrical grading. The series is designed for cost-effective solutions in mass-market electronics. The BC846BFSWQ-7 specifically targets applications requiring small form factors and reliable switching performance.
Publicly confirmed substitute part numbers are not available in the provided source data.