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The BC846BHZGT116 is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates in a surface-mount SOT-23-3 package and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 120 mA with a power dissipation rating of 350 mW. DC current gain (hFE) ranges from 200 to 450 at 2 mA and 5 V. Additional specifications feature a transition frequency (fT) of 300 MHz, a collector-emitter saturation voltage of 400 mV, and a maximum operating temperature of +150°C.
Verify the specific ordering code against official ROHM documentation to ensure correct suffix alignment. Confirm that the AEC-Q101 qualification status matches project requirements. Check datasheet revisions for any updates to thermal or electrical limits before finalizing procurement.
Select this component when a high-gain NPN transistor with automotive certification is required. Ensure the 65 V collector-emitter voltage rating exceeds the maximum circuit voltage. Verify that the 120 mA current capacity and 350 mW power dissipation meet the thermal and load demands of the target application.
This part belongs to the BC846 series of general-purpose NPN transistors produced by ROHM Semiconductor. The 'HZG' designation indicates the automotive-grade variant compliant with AEC-Q101 standards. The 'T116' suffix specifies the reel packaging format used for automated surface-mount assembly processes.
Public confirmed substitute part numbers are not available in the provided source material.