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Product Detailed Parameters
- Description：TRANS NPN 65V 100MA SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The BC846BLT1G is a single NPN silicon general-purpose transistor manufactured by onsemi. It operates within a collector-emitter voltage of 65 V and a collector-base voltage of 80 V, with an emitter-base voltage rating of 6 V. The device supports a continuous collector current of 100 mA and dissipates up to 225 mW at 25°C. It features a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, and a transition frequency (fT) of 100 MHz. The component functions reliably across a junction temperature range of -55°C to +150°C.
Feature Summary
- Single NPN bipolar junction transistor designed for general-purpose switching and amplification applications
- High DC current gain ensuring effective signal control in low-power circuits
- Robust electrostatic discharge protection exceeding 4000 V via the Human Body Model
Applications
- General-purpose amplifier stages
- Low-frequency switching circuits
- Audio pre-amplifier interfaces
Procurement Notes
Verify the specific suffix 'BL' against official documentation to confirm the required hFE binning level. Ensure the ordering code matches the exact tape and reel specifications required for automated assembly processes. Cross-reference the manufacturer's latest datasheet revision to confirm compliance with current environmental directives and RoHS standards before finalizing procurement orders.
Selection Notes
Select this component when a standard NPN configuration with moderate voltage ratings is required. The BC846 series offers a balance of high gain and fast switching suitable for consumer electronics. Verify that the thermal dissipation limits align with the target PCB layout constraints. Confirm that the SOT-23 footprint accommodates the available board space without compromising adjacent component placement.
Part Context
This device belongs to the BC846ALT1 Series, which includes variants differentiated primarily by their DC current gain ranges. The 'B' designation indicates a specific gain bin optimized for consistent performance in linear and switching operations. This family utilizes a surface-mount SOT-23 package to facilitate automated manufacturing and compact circuit board designs.
Replacement Considerations
BC846BLT3G
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (VCEO) is 65 V.
How is the pinout configured for the SOT-23 package?
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
What is the specified DC current gain range?
The minimum DC current gain (hFE) is 200 when measured at IC = 2.0 mA and VCE = 5.0 V.
