BC846BLT1G

$0.10

Description：TRANS NPN 65V 0.1A SOT23-3
Series：-

SKU:b1ad9f755bcf Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 65V 0.1A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：65 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
Power - Max：300 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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BC846BLT1G

Overview

The BC846BLT1G is a single NPN silicon general-purpose transistor from the BC846ALT1G series, manufactured by onsemi. It operates with a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, with a transition frequency of 100 MHz. Packaged in an SOT-23 (TO-236) surface-mount case, it supports a junction temperature range from -55°C to +150°C and offers high ESD protection exceeding 4000 V via the Human Body Model.

Feature Summary

High ESD protection capability exceeding 4000 V under the Human Body Model standard.
Designed for general-purpose amplifier applications within a wide operating temperature range.
Manufactured using lead-free, halogen-free, and BFR-free compliant processes.

Applications

General-purpose amplification circuits
Switching applications requiring low power consumption
Signal processing stages in consumer electronics

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure compliance with RoHS directives and material declarations prior to integration. Confirm that the selected variant meets all environmental and safety standards required for the intended deployment environment.

Selection Notes

Select this component when a single NPN transistor with a 65 V collector-emitter breakdown voltage is required. The BC846B binning provides a guaranteed minimum hFE of 200, suitable for moderate gain requirements. Consider thermal derating above 25°C to maintain safe operation within the specified power dissipation limits.

Part Context

This part belongs to the BC846ALT1G series, which includes variants with different voltage ratings such as BC847 (45 V) and BC848 (30 V). All series members share the same SOT-23 footprint and pinout configurations, facilitating design flexibility while maintaining consistent physical dimensions across the product family.

Replacement Considerations

BC846ALT1G

FAQ

What is the marking code for the BC846BLT1G?

The device marking code for the BC846BLT1G is '1B'.

Does the BC846BLT1G support automotive applications?

Standard versions are not explicitly qualified for automotive use; however, parts with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable.