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The onsemi BC846BM3T5G is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter breakdown voltage of 65 V and a maximum continuous collector current of 100 mA. The device operates with a transition frequency of 100 MHz and dissipates up to 265 mW of power. It is housed in a compact SOT-723 package, suitable for space-constrained designs. The component supports an operating temperature range from -55°C to 150°C junction temperature.
Verify the specific suffix BM3T5G against official onsemi documentation to confirm the SOT-723 package and tape-and-reel configuration. Ensure compatibility with peak reflow temperatures specified in the datasheet. Confirm RoHS compliance status for your region's regulatory requirements before finalizing procurement specifications.
Select this component when a small-form-factor NPN transistor is required for low-power switching or amplification. The 65 V rating provides adequate headroom for standard logic-level circuits. Consider the thermal characteristics of the SOT-723 package if high ambient temperatures are expected in the final application environment.
This part belongs to the BC846 series of general-purpose NPN transistors manufactured by onsemi. The series is widely used in portable devices due to its small footprint and reliable performance. The BM3 variant specifically denotes the SOT-723 packaging option, distinguishing it from larger leaded packages like SOT-23.
BC846ALT3G and BC846BLT3G are parametric equivalents available from onsemi. Verify pinout compatibility and exact electrical limits such as saturation voltage and leakage current before substituting.