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The BC846BMTF is an NPN epitaxial silicon transistor from ON Semiconductor, housed in a SOT-23 surface-mount package. It features a collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device offers a DC current gain (hFE) range of 200 to 450 at 2 mA. Key electrical parameters include a collector-base voltage of 80 V, emitter-base voltage of 6 V, and power dissipation of 310 mW. The transition frequency is 300 MHz, with a junction temperature rating up to 150 °C.
Verify the specific hFE binning classification corresponds to the required gain range for the target application. Confirm that the tape and reel packaging format aligns with existing automated assembly equipment specifications. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.
Select this component when a low-voltage NPN transistor with moderate current handling capabilities is required. The B suffix indicates a specific DC current gain band, ensuring consistent amplification characteristics across production batches. Consider the SOT-23 footprint constraints and verify compatibility with available PCB land patterns during the design phase.
This part belongs to the BC846/BC847/BC848/BC850 family of NPN epitaxial silicon transistors manufactured by ON Semiconductor. The 'M' suffix denotes the SOT-23 package style, while 'TF' specifies tape and reel packing. These devices are designed as complements to the BC85x series PNP transistors for complementary circuit designs.
Direct substitutes within the same family include BC846AMTF and BC846CMTF, which share identical package and electrical ratings but differ in DC current gain classifications. Verify pinout compatibility and thermal characteristics before substituting.