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The BC846BWE6327 is a single NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-323 surface-mount package with three terminals. Key electrical ratings include a maximum collector-emitter voltage of 65 V, a maximum collector-base voltage of 80 V, and a maximum emitter-base voltage of 6 V. The device supports a continuous DC collector current of 100 mA and has a power dissipation capability of 200 mW. It features a transition frequency of 100 MHz and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix E6327 against official Infineon documentation to confirm manufacturing lot codes and compliance details. Confirm availability status as distribution data may vary. Ensure the component meets required RoHS standards for the target application region before procurement.
Select this component when a single NPN transistor with 65V breakdown voltage and 100mA current capacity is required in a small SOT-323 footprint. Compare hFE gain ranges and power dissipation limits against circuit requirements. Consider thermal management needs given the 200mW power rating in the specified package.
This part belongs to the BC846 series of small-signal NPN transistors from Infineon. The series offers various gain classifications and packaging options. The BC846BWE6327 specifically denotes the B gain bin variant in the SOT-323 package, designed for general electronic applications requiring standard switching or amplification functions.
Cross-reference with other manufacturers' BC846B equivalents in SOT-323 packages. Verify pinout compatibility and electrical parameter overlaps, particularly VCEO and IC limits, before substitution.