BC846BWE6327

BC846BWE6327

$0.02
  • Description:TRANS NPN 65V 0.1A SOT-323
  • Series:-

SKU:ad5c9910136a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 65V 0.1A SOT-323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:330 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Grade:-
  • Qualification:-

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BC846BWE6327

Overview

The BC846BWE6327 is a single NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-323 surface-mount package with three terminals. Key electrical ratings include a maximum collector-emitter voltage of 65 V, a maximum collector-base voltage of 80 V, and a maximum emitter-base voltage of 6 V. The device supports a continuous DC collector current of 100 mA and has a power dissipation capability of 200 mW. It features a transition frequency of 100 MHz and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Single NPN configuration for compact circuit integration
  • Silicon technology construction for reliable performance
  • Surface-mount SOT-323 packaging for automated assembly

Applications

  • General-purpose signal amplification
  • Switching applications in low-power circuits
  • Audio pre-amplifier stages

Procurement Notes

Verify the specific suffix E6327 against official Infineon documentation to confirm manufacturing lot codes and compliance details. Confirm availability status as distribution data may vary. Ensure the component meets required RoHS standards for the target application region before procurement.

Selection Notes

Select this component when a single NPN transistor with 65V breakdown voltage and 100mA current capacity is required in a small SOT-323 footprint. Compare hFE gain ranges and power dissipation limits against circuit requirements. Consider thermal management needs given the 200mW power rating in the specified package.

Part Context

This part belongs to the BC846 series of small-signal NPN transistors from Infineon. The series offers various gain classifications and packaging options. The BC846BWE6327 specifically denotes the B gain bin variant in the SOT-323 package, designed for general electronic applications requiring standard switching or amplification functions.

Replacement Considerations

Cross-reference with other manufacturers' BC846B equivalents in SOT-323 packages. Verify pinout compatibility and electrical parameter overlaps, particularly VCEO and IC limits, before substitution.

BC846BWE6327BC846BWE6327
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