BC846BWT1G

BC846BWT1G

$0.12
  • Description:TRANS NPN 65V 0.1A SC70-3
  • Series:-

SKU:54f628d2c473 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 65V 0.1A SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:150 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)
  • Grade:-
  • Qualification:-

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BC846BWT1G

Overview

The onsemi BC846BWT1G is a general-purpose NPN silicon transistor housed in the SC-70 (SOT-323) surface-mount package. It features a collector-emitter voltage of 65 V, a continuous collector current of 100 mA, and a total device dissipation of 200 mW at 25°C ambient temperature. The component operates within a junction and storage temperature range of -55°C to +150°C. Electrical characteristics include a minimum DC current gain of 200 at 2.0 mA collector current and a transition frequency of 100 MHz.

Feature Summary

  • Designed for low-power surface mount applications using the compact SC-70/SOT-323 housing
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant construction
  • Suitable for automotive applications requiring unique site and control change requirements with AEC-Q101 qualification

Applications

  • General purpose amplifier circuits
  • Low power switching applications
  • Automotive electronics requiring AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity and marking code. Confirm that the device code corresponds to the BC846B variant rather than other series members like BC847 or BC848. Ensure compliance with environmental standards such as Pb-Free and RoHS if applicable to the target assembly process.

Selection Notes

Select this component when a small form factor NPN transistor is required for low-power signal amplification or switching. The BC846B offers a higher minimum DC current gain compared to the 'A' variant, making it suitable for applications demanding consistent gain performance at low currents. Verify thermal constraints against the specified junction-to-ambient resistance.

Part Context

This part belongs to the BC846, BC847, and BC848 family of general-purpose NPN transistors manufactured by onsemi. These devices share the same physical SC-70/SOT-323 package but differ in their voltage ratings and gain specifications. The BC846 series specifically provides the highest voltage ratings within the group, supporting up to 65 V collector-emitter voltage.

Replacement Considerations

BC846AWT1G

FAQ

What is the pin configuration for the BC846BWT1G?

Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.

Is the BC846BWT1G qualified for automotive applications?

Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 65 V.

BC846BWT1GBC846BWT1G
$0.12
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