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The onsemi BC846BWT1G is a general-purpose NPN silicon transistor housed in the SC-70 (SOT-323) surface-mount package. It features a collector-emitter voltage of 65 V, a continuous collector current of 100 mA, and a total device dissipation of 200 mW at 25°C ambient temperature. The component operates within a junction and storage temperature range of -55°C to +150°C. Electrical characteristics include a minimum DC current gain of 200 at 2.0 mA collector current and a transition frequency of 100 MHz.
Verify the specific ordering suffix matches the required packaging quantity and marking code. Confirm that the device code corresponds to the BC846B variant rather than other series members like BC847 or BC848. Ensure compliance with environmental standards such as Pb-Free and RoHS if applicable to the target assembly process.
Select this component when a small form factor NPN transistor is required for low-power signal amplification or switching. The BC846B offers a higher minimum DC current gain compared to the 'A' variant, making it suitable for applications demanding consistent gain performance at low currents. Verify thermal constraints against the specified junction-to-ambient resistance.
This part belongs to the BC846, BC847, and BC848 family of general-purpose NPN transistors manufactured by onsemi. These devices share the same physical SC-70/SOT-323 package but differ in their voltage ratings and gain specifications. The BC846 series specifically provides the highest voltage ratings within the group, supporting up to 65 V collector-emitter voltage.
BC846AWT1G
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 65 V.