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Product Detailed Parameters
- Description：TRANS NPN 65V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The onsemi BC846CLT1G is a general-purpose NPN silicon transistor housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of 65 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain (hFE) of 420 at 2.0 mA, with a transition frequency of 100 MHz. Thermal dissipation reaches 225 mW on FR-5 boards. Operating junction temperatures range from -55°C to +150°C.
Feature Summary
- High DC current gain suitable for low-level signal amplification
- Robust electrostatic discharge protection exceeding 4000 V via Human Body Model
- Lead-free and halogen-free construction compliant with RoHS standards
Applications
- General-purpose amplifier circuits
- Switching applications requiring high gain
- Low-power signal processing stages
Procurement Notes
Verify the specific ordering suffix 'LT1G' against official onsemi documentation to confirm tape-and-reel packaging and lead-free status. Ensure the component matches the required pinout configuration for the target PCB footprint. Cross-reference the manufacturer's latest datasheet revision to validate electrical characteristics before final integration.
Selection Notes
Select this component when a high-gain NPN transistor is required within a compact SOT-23 form factor. The BC846C variant provides superior current gain compared to A or B grades. Confirm that the 65 V collector-emitter breakdown voltage aligns with the circuit's maximum operating voltage requirements.
Part Context
This part belongs to the BC846ALT1G series of general-purpose NPN transistors manufactured by onsemi. The series includes variants with different current gain groupings (A, B, C) and voltage ratings. The BC846C specifically denotes the highest gain grouping within the 65 V collector-emitter voltage class.
Replacement Considerations
BC846BLT1G
FAQ
What is the marking code for the BC846CLT1G?
The device marking code is 3C.
What is the ESD rating for this component?
The component has an ESD rating of greater than 4000 V according to the Human Body Model.
Is this component qualified for automotive applications?
Standard versions are not explicitly stated as AEC-Q101 qualified; only devices with the S or NSV prefix are designated for automotive and unique site control requirements.
