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The BC846SH6433XTMA1 is a dual NPN bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-363-6 surface-mount package. It features a maximum DC collector current of 200 mA and a continuous collector current of 100 mA. The device supports a collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 250 mW with a gain-bandwidth product (fT) of 250 MHz. The component operates within a temperature range of -65°C to +150°C and meets AEC-Q100 qualification standards.
Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel specifications and packaging details. Ensure compatibility with existing PCB footprints for the SOT-363-6 package. Confirm that the AEC-Q100 qualification status aligns with target application requirements before finalizing procurement decisions.
Select this component when a dual NPN BJT solution is required in a small outline package. The 65 V VCEO rating suits low-voltage switching applications. Consider the 250 mW power dissipation limit for thermal management. Verify that the 200 mA peak current capability meets load requirements without exceeding safe operating area limits.
This part belongs to the BC846 series of dual transistors manufactured by Infineon Technologies. The 'S' designation typically indicates a specific binning or performance grade within the series. The 'H6433' suffix denotes the specific reel packaging configuration used for automated assembly processes.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other dual NPN transistors in SOT-363 packages only after verifying pinout compatibility and electrical parameter equivalence through official datasheets.