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The BC847ALT1G is a general-purpose NPN silicon transistor from the BC847ALT1G series, manufactured by onsemi. It features a collector-emitter voltage of 45 Vdc and a collector-base voltage of 50 Vdc. The device supports a continuous collector current of 100 mAdc with a maximum power dissipation of 225 mW on an FR-5 board. It operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 90 to 220 at IC = 10 mA and VCE = 5.0 V, and a transition frequency (fT) of 100 MHz.
Verify the specific ordering suffix and prefix against official documentation to ensure correct package type and marking. Confirm AEC-Q101 qualification status if automotive compliance is required. Check for discontinued status or alternative recommendations for new designs. Validate tape and reel specifications for automated assembly compatibility.
Select this component for applications requiring a standard NPN transistor with moderate voltage ratings and low power dissipation. Consider the BC846 or BC848 variants if higher or lower voltage ratings are needed. Ensure the SOT-23 package fits the PCB layout constraints. Verify thermal management requirements based on the specified derating curves.
This part belongs to the BC846ALT1G series of general-purpose NPN silicon transistors. The series includes variants with different voltage ratings such as BC846 (65V), BC847 (45V), and BC848 (30V). All share similar packaging and current capabilities but differ in breakdown voltages.
BC847BLT1G
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
Yes, devices with the S and NSV prefixes are AEC-Q101 qualified and PPAP capable for automotive applications.
The maximum VCE(sat) is 0.6 V when IC = 100 mA and IB = 5.0 mA.