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The BC847AQB-QZ is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a DFN1110D-3 (SOT8015) surface-mount package. The device supports a maximum DC collector current of 200 mA and features a collector-emitter breakdown voltage (Vceo) of 45 V. Additional voltage ratings include a collector-base voltage (Vcbo) of 50 V and an emitter-base voltage (Vebo) of 6 V. The component has a power dissipation rating of 400 mW.
Verify the specific suffix QZ to confirm the DFN1110D-3 packaging and automotive grade status. Ensure compatibility with SMD/SMT assembly processes. Confirm RoHS compliance requirements against project specifications before finalizing procurement orders.
Select this component when a compact, automotive-grade NPN transistor with 200 mA capability is required. The DFN1110D-3 package offers a small footprint suitable for space-constrained designs. Compare against standard SOT packages if higher current or different pinout configurations are needed.
This part belongs to the BC847 series of general-purpose NPN transistors from Nexperia. While many variants use SOT23 or SOT323 packages, the BC847AQB-QZ specifically utilizes the DFN1110D-3 form factor. This series is widely used in consumer electronics and automotive applications requiring reliable low-power switching.
Direct substitutes may include other BC847A variants in different packages, such as BC847A in SOT23, provided pinout compatibility and package dimensions allow for physical substitution without PCB redesign.