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The BC847AW is a general-purpose NPN silicon transistor from Taiwan Semiconductor Corporation, housed in the SOT-23 surface-mount package. It features a collector-emitter voltage rating of 45V and a continuous collector current capability of 100mA. The device offers a DC current gain (hFE) range typically spanning from 110 to 800, ensuring reliable amplification performance. Designed for low-voltage applications, it maintains a collector-base breakdown voltage of 60V and an emitter-base breakdown voltage of 5V. The component operates within a junction temperature range of -55°C to +150°C, providing robust thermal stability for standard electronic circuits requiring compact switching or linear amplification solutions.
Verify the specific suffix 'AW' against official datasheets to confirm binning or tape-and-reel specifications. Ensure compatibility with standard SOT-23 footprints during PCB layout. Confirm manufacturer authenticity through authorized distribution channels to avoid counterfeit components that may exhibit degraded electrical characteristics or thermal performance.
Select this component when a compact NPN transistor with moderate current handling and high gain is required. Compare hFE bins if precise gain control is necessary for the application. Consider thermal dissipation limits in enclosed spaces. Verify voltage ratings exceed circuit peak values to ensure long-term reliability under varying load conditions.
This part belongs to the BC847 series of small-signal transistors widely used in consumer electronics and industrial controls. The BC847 family provides standardized pinouts and electrical characteristics across various manufacturers, facilitating direct replacement in existing designs. The SOT-23 form factor allows for automated assembly and reduced board space consumption compared to through-hole alternatives.
The maximum continuous collector current is 100mA.
No, the suffix typically denotes packaging or binning variations; the core electrical function remains identical to the BC847 series.
The device supports a junction temperature range from -55°C to +150°C.