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The BC847AW_R1_00001 is a single NPN general-purpose bipolar junction transistor manufactured by Panjit International Inc. It utilizes an epitaxial silicon planar design housed in an SOT-323 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. Power dissipation is rated at 250 mW. The component complies with EU RoHS directives and IEC61249 standards for halogen-free green molding compounds.
Verify the specific datasheet version for the BC847AW_R1_00001 to confirm exact electrical tolerances and thermal characteristics, as these values can vary between manufacturing revisions. Ensure that the SOT-323 footprint matches the target PCB layout requirements. Confirm RoHS and halogen-free status if environmental compliance is mandatory for the end application.
Select this component for low-power NPN switching or amplification tasks requiring a compact SOT-323 form factor. The 45 V rating suits low-voltage logic interfaces. Consider the 250 mW power dissipation limit when designing thermal management strategies. Verify compatibility with standard surface-mount reflow soldering profiles.
This part belongs to the BC847 series of NPN transistors produced by Panjit. It serves as a surface-mount alternative to through-hole variants, offering similar electrical performance in a smaller footprint. The R1 suffix typically denotes a specific tape-and-reel packaging configuration intended for automated assembly processes.
Compatible substitutes include other NPN transistors in the SOT-323 package with comparable VCEO and IC ratings, such as the 2N7002 series equivalents or generic BC847A/B/C variants from other manufacturers, provided pinout and electrical limits align.