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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
- Grade：-
- Qualification：-
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Overview
The BC847AWT1G is an NPN silicon general-purpose transistor from the BC847x series, housed in a SC-70/SOT-323 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current of 100 mA. The device offers a DC current gain (hFE) range of 110 to 220 at IC = 10 mA. Electrical characteristics include a collector-base breakdown voltage of 50 V and an emitter-base breakdown voltage of 6.0 V. Thermal performance specifies a total power dissipation of 200 mW on an FR-5 board at 25°C ambient temperature.
Feature Summary
- Designed for low-power surface mount applications within a compact SC-70/SOT-323 plastic package.
- Suitable for general-purpose amplifier and switching functions.
- Compliant with RoHS standards and free of halogens and brominated flame retardants.
Applications
- General-purpose amplification circuits
- Low-power switching applications
- Automotive electronics requiring AEC-Q101 qualification
Procurement Notes
Verify that the ordering suffix matches 'WT1G' to confirm the specific SOT-323 tape and reel packaging configuration. Confirm the 'A' selection group designation aligns with the required DC current gain specifications for your circuit design. Ensure compliance with automotive site control requirements if utilizing the S or NSV prefix variants.
Selection Notes
Select this component when a small form factor NPN transistor is required for low-voltage signal processing. The BC847AWT1G provides a defined hFE range suitable for standard biasing networks. Consider the 45 V collector-emitter rating and 100 mA current limit against peak load requirements. Verify thermal constraints for high-density PCB layouts due to the limited power dissipation capability of the SC-70 package.
Part Context
This part belongs to the BC846/BC847/BC848 family of general-purpose NPN transistors manufactured by onsemi. These devices share identical physical packages but differ in voltage ratings and gain bands. The BC847 variant specifically targets 45 V applications, distinguishing it from the higher-rated BC846 and lower-rated BC848 counterparts within the same product line.
Replacement Considerations
Direct substitutes include BC847BWT1G and BC847CWT1G, which offer different DC current gain ranges while maintaining identical electrical ratings and pinouts. Cross-manufacturer equivalents such as Nexperia BC847CW-G may be considered if package compatibility and gain specifications are verified.
