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The BC847B-13-F is an NPN small-signal transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT23 package. It features a collector-emitter breakdown voltage of 45 V and a continuous collector current rating of 100 mA. The device provides a minimum DC current gain (hFE) of 200 at IC = 2.0 mA and VCE = 5 V. Electrical characteristics include a transition frequency of 100 MHz and a maximum power dissipation of 310 mW under standard conditions.
Verify the specific ordering suffix '-13-F' to confirm the 10,000-piece reel packing quantity. Ensure the component matches the BC847B hFE binning requirements for your circuit design. Confirm that the SOT23 package dimensions align with your PCB footprint specifications before finalizing procurement.
Select this component when a 45 V collector-emitter voltage rating is required alongside high current gain. The BC847B variant offers a minimum hFE of 200, distinguishing it from the lower-gain BC847A. Consider the BC857B as the complementary PNP option if a matched pair is needed for push-pull configurations.
This part belongs to the BC846A–BC848C series of NPN general-purpose transistors. The 'B' designation indicates a specific DC current gain range compared to 'A' or 'C' variants within the same family. These devices are widely used in portable electronics due to their low power consumption and compact form factor.
Compatible substitutes include the BC847B-13-HF from Diodes Incorporated and the BC847B,215 from Nexperia. Verify that replacement parts maintain the same SOT23 package and meet the 45 V VCEO requirement.
The collector-emitter breakdown voltage (BVCEO) for the BC847B is 45 V.
Yes, the complementary PNP types are available in the BC856A–BC858C series.
The transition frequency is typically 100 MHz at IC = 10 mA and VCE = 5 V.